| 类型存储器 | 存储容量1GB |
| 针脚数63 | 用途电脑 |
| 品牌MICRON | 型号MT29F1G08ABBEAH4-IT:E |
| 封装VFBGA63 | 功率1.7 V ~ 1.95 V |
| 特色服务FLASH - NAND | 批号18+ |
micron闪存存储器mt29f1g08abbeah4-it:e代理现货
制造商
micron technology inc.
制造商零件编号
mt29f1g08abbeah4-it:e
描述
ic flash 1gbit 25ns 63vfbga
mt29f1g08abbeah4-it:e规格
存储器类型 非易失
存储器格式 闪存
技术 flash - nand
存储容量 1gb (128m x 8)
写周期时间 - 字,页 -
存储器接口 并联
电压 - 电源 1.7 v ~ 1.95 v
工作温度 -40°c ~ 85°c(ta)
安装类型 表面贴装
封装/外壳 63-vfbga
mt29f1g08abbeah4-it:efinding the right nand solution we’ve been developing leading-edge memorytechnologyfor more than 30 years.our long tradition of innovation and technology leadership has helped shape our broad nandflash offering. with high-performance nandproducts that cover everything from mobile, to embedded, to enterprise storage applications,we can help you find the best solution for your design. overview benefits densities configurations supply voltages slcnand up to 100,000 p/ecycle endurance fastest throughput of the various nandtechnologies (mlc, tlc) compatibilitywith theonfi synchronous interface 128mb –512gb x1, x8, x16 1.8v, 3.0v, 3.3v mlcnand solid performance and endurance twice the densityof slcnandat a lower cost-per-bit compatibilitywith theonfi synchronous interface 16gb–1tb x8 3.3v tlcnand higher densityin the same space, at a lower cost than slc or mlcnand 64gb–128gb x8 3.3v serial nand enables large memorysubsystems increased power efficiency high performance, lowpower increased bandwidth 1gb–4gb x1 3.3v
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联系人:李积文
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深圳市水星电子有限公司
李先生
13632880560
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